unisonic technologies co., ltd 2sd313 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r203-001,d npn epitaxial planar transistor ? description the utc 2sd313 is designed for use in general purpose amplifier and switching applications. ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sd313l-x-ta3-t 2sd313g-x-ta3-t to-220 b c e tube 2sd313l-x-tf3-t 2SD313G-X-TF3-T to-220f b c e tube
2sd313 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-001,d ? absolute maximum ratings parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v collector current i c 3 a collector dissipation p c 1.75 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =1ma 60 v collector-emitter breakdown voltage bv ceo i c =10ma 60 v emitter-base breakdown voltage bv ebo i e =100ua 5 v collector cut-off current i cbo v cb =20v, i e =0 0.1 ma emitter cut-off current i ebo v eb =4v, i c =0 1.0 ma collector-emitter satu ration voltage v ce ( sat ) i c =2a, i b =0.2a 1.0 v base-emitter on voltage v be ( on ) v ce =2v, i c =1a 1.5 v dc current gain h fe i c =1a, v ce =2v 40 320 i c =0.1a,v ce =2v 40 ? classification on h fe rank c d e f range 40-80 60-120 100-200 160-320
2sd313 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-001,d ? typical characteristics h fe saturation voltage, v ce(sat) (mv) 100 1000 10000 10 100 1000 10000 collector current (ma) v be(sat) vs. i c v be(sat) (ma) i c =10i b soa 0.1 1 10 110100 collector to emitter voltage (v) collector current (a) 20ms dc v be(on) (mv)
2sd313 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-001,d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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